Recent Patents on Electrical Engineering

ISSN: 1874-4761 - Volume 3, 3 Issues, 2010

Executive Editor:

Khurshid Zaman
Bentham Science Publishers Ltd.

Associate Editor:

Mehmet R. Yuce
School of Electrical Engineering & Computer Science
University of Newcastle
Callaghan, Australia


Regional Editors:

Amir G Aghdam
Department of Electrical Engineering & Computer Engineering
Concordia University
Montreal, Canada

Massimo Poncino
Politecnico di Torino
Torino, Italy

Editorial Advisory Board:

A. Abbosh (Univ. Queensland, Brisbane, Australia)
A. Abdollahi ((Univ. California, Riverside, CA, USA)
N. Abu-Khader (Hashemite Univ., Zarqa, Jordan)
T. Adali (Univ.Maryland Baltimore County, Baltimore, MD, USA)
S.S. Agaian (University of Texas San Antonio, San Antonio, TX, USA)
A. Ahmadinia (Univ. Edinburgh, Edinburgh, Scotland)
F. Ahmad (Tarleton State University, Stephenville, TX, USA)
W.H. Ahmed (Atomic Energy Canada Ltd., Chalk River, Canada)
B. Ai (Tsinghua University, Beijing, China)
A. Akdagli (Mersin University, Mersin, Turkey)
A. Akhbardeh (Johns Hopkins University, Baltimore, MD, USA)
G. Ala (Università degli Studi di Palermo, Palermo, Italy)
E. Alarcón (Technical University of Catalunya, Barcelona, SPAIN)
A.M.A. Ali (Analog Devices, Inc., Greensboro, NC, USA)
O. Al-Jarrah (Jordan University of Science and Technology, Irbid, Jordan)
A.H. Al-Khursan (Thi-Qar University, Nassiriya, Iraq)
A. Anand (Philips Res. North America, Briarcliff Manor, NY, USA)
A. Aragon-Zavala (Tecnológico de Monterrey, Monterrey, Mexico)
A. Astolfi (Imperial College London, London, UK)
D.K. Aswal (Bhabha Atomic Res. Ctr., Mumbai, India)
E. Atanassova (Institute of Solid State Physics, Sofia, Bulgaria)
A.A.O. Atitfi (Cairo University, Cairo, Egypt)
S. Azam (Shimane University, Shimane-ken, Japan)
A. Balasinski (Cypress Semiconductor, San Jose, CA, USA)
A. Banos (University of Murcia, Murcia, Spain)
R. Bashir (Purdue University, West Lafayette, IN, USA)
C. Basaran (University at Buffalo, Buffalo, NY, USA)
S. Battiato (University of Catania, Catania, Italy)
A. Benfdila (University M. Mammeri, Tizi-Ouzou, Algeria)
S. Bhanja (Univ.South Florida, Tampa, FL, USA)
A. Bhushan (Louisiana State University, Baton Rouge, LA, Canada)
Á.A.S. Blas Oltra (Univ.Miguel Hernández de Elche, Alicante, Spain)
A. Bo (Beijing Jiaotong University, Beijing, China)
H. Bogdan (Univ.Alaska Anchorage, Anchorage, AK, USA)
S. Callegari (University of Bologna, Bologna, Italy)
C.A. Canesin (UNESP- FEIS - Sa~o Paulo State University, Ilha Solteira, Brazil)
T. Chahed (Institute National des Télécommunications, Cedex, France)
T.K. Chen (National Univ. Singapore, Singapore, Singapore)
L.M. Cheng (City university of Hong Kong, Hong Kong, China)
Y.-T. Cheng (National Chiao Tung University, Hsinchu, Taiwan)
S.S. Chung (National Chiao Tung University, Hsinchu, Taiwan)
A.O. Conde (Universidad Simón Bolívar, Caracas, Venezuela)
A.G. Constantinides (Imperial College, London, UK)
M. Debbah (SUPELEC, Cedex, France)
K. Dimililer (Near East University, Mersin, Turkey)
A.R. Dhaini (Concordia University, Montreal, Canada)
A. Dokania (Delft Univ.Tech, Delft, Netherlands)
C. Duvvury (Texas Instruments, Dallas, TX, USA)
G. Eden (University of Ilinois, Urbana, IL, USA)
A. Eldek (Jackson State Univ., Jackson, MS, USA)
A. El-Maleh (KFUPM, Dhahran, Saudi Arabia)
A. El Oualkadi (Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium)
A. Eroglu (MKS Instruments, Rochester, NY, USA)
J.R. Espinoza (Universidad de Concepcio´n, Concepcio´n, Chile)
A. Fallahi (Univ. Manitoba, Winnipeg, Canada)
Z. Fan (Xerox Res.Tech. Corp., Webster, NY, USA)
S.Y. Foo (Florida Agric./Mechanical University, Tallahassee, FL, USA)
P. Franzon (NC State University, Raleigh, NC, USA)
A. Freundlich (Univ. Houston, Houston, TX, USA)
T. Fukuda (Nagoya University, Nagoya, Japan)
A. Giannoula (University of Toronto,Toronto, Canada)
A.Giua (Universita'di Cagliari,Cagliari,Italy)
N.M. Gorshkova (Inst. Radio Eng. Elect, Moscow, Russia)
A. Görür (Nigde Üniversitesi, Nigde, Turkey)
R. Gupta (University of California, San Diego, CA, USA)
A. Gusso (UESC, Bahia, Brazil)
A.B. Hadiashar (Swinburne Univ.Technology, Victoria, Australia)
P. Handel (Royal Inst.Tech., Stockholm, Sweden)
A. Harb (Univ. Central Florida, Orlando, FL, USA)
B. Hoanca (Univ. Alaska Anchorage, Anchorage, AK, USA)
A. Hossen (Sultan Qaboos University, Muscat, Oman)
C.Y. Huang (National Chiao Tung University, Hsinchu, Taiwan)
A. Ignative (University of Houston, Houston, TX, USA)
B. Ismail (Lakehead University, Thunder Bay, Canada)
M. Ismail (Ohio State University, Columbus, OH, USA)
C. Jagadish (Australian National University, Canberra, Australia)
A. Jain (Samrat Ashok Technological Institute, Vidisha, India)
Z.-P. Jiang (Polytechnic University, Brooklyn, NY, USA)
Y. Jin (Honda Research Institute Europe, Offenbach, Germany)
A. Jones (Univ. Pittsburgh, Pittsburgh, PA, USA)
I.A. Kakadiaris(University of Houston, Houston, TX, USA)
H. Kalva (Florida Atlantic University, Boca Raton, FL, USA)
T. Kanade (Carnegie-Mellon Univ., Pittsburgh, PA, USA)
K.K. Kar (Indian Institute of Technology, Kanpur, India)
A.D. Karlis (Democritus Univ.Thrace, Xanthi, Greece)
A.N. Khalil (City College of City Univ., New York, NY, USA)
A. Khan (Brunel University, West London, UK)
M.A. Khan (Memorial Univ. Newfoundland, St. John's, Canada)
S.P. Khatri (Texas A&M University, Texas, TX, USA)
S. Khizroev (University of California, Riverside, CA, USA)
J. Kocijan (Jozef Stefan Institute, Ljubljana, Slovenia)
A. Kong (Univ. Waterloo Waterloo, Canada)
E.B. Kosmatopoulos (Technical University of Crete, Crete, Greece)
A.Y. Kovalgin (Univ. Twente, Enschede, Netherlands)
M.J. Kumar (Indian Inst. Tech., New Delhi, India)
A. Kumar (AK Electromagnetique Inc., Les Coteaux, Canada)
G.A. Kumar (Rutgers-State Univ. New Jersey, Piscataway, NJ, USA)
T.R. Kurfess (Clemson University, Clemson, SC, USA)
Y.-S. Lai ( Advanced Semiconductor Engineering, Inc, Kaohsiung, Taiwan)
M. Lallart (INSA Lyon, Lyon, France)
D.A. Lampasi (University of Rome Sapienza, Roma, Italy)
A. Lau (Stanford University, Stanford, CA, USA)
N.-C. Lee (Indium Corporation of America, Clinton, NY, USA)
T.E. Leong (Nanyang Technological University, Singapore)
M.D. Levine (McGill University, Montreal, Canada)
Y.C. Liang (National University of Singapore, Singapore)
Y.B. Lin (National Chiao Tung University, Hsinchu, Taiwan)
A. Lo´pez-Marti´n (Public University of Navarra, Navarra, Spain)
A.N. Lozhkin (Fujitsu Laboratories Ltd, Yokosuka, Japan)
J. Lu (Institute of Systems Science, Beijing, China)
L.H. Lu (National Taiwan Univ.,Taipei, Taiwan)
P.C.-K. Luk (Cranfield University - DCMT, Shrivenham, UK)
A.K. Mahapatro (Purdue University, West Lafayette, IN, USA)
M.A. Mahdi (Universiti Putra Malaysia, Selangor, Malaysia)
T.J. Maloney (Taiwan University, Intel Santa Clara, Taiwan)
N.E. Mastorakis (Technical university of Sofia, Sofia, Bulgaria)
A.Z. Melikov (Institute of Cybernetics, Baku, Azerbaijan)
S.O. Memik (Northwestern University, Evanston, IL, USA)
A. Merkocìi (Catalan Institute of Nanotechnology (ICN), Barcelona, Spain)
A. Mitra (Indian Inst.Tech., Guwahati, India)
A. Mohany (Atomic Energy of Canada Limited, Ontario, Canada)
P. Mohapatra (University of California, Davis, CA, USA)
A. Morini (Univ. Politecnica delle Marche, Ancona, Italy)
J.E. Morris (Portland State University, Portland, OR, USA)
S.C. Mukhopadhyay (Massey University, Palmerston North, New Zealand)
K. Nagaraj (Texas Instruments Incorporated, Dallas, TX, USA)
V.G. Oklobdzija (The University of Texas at Dallas, Texas, TX, USA)
J.P.B. de Moura Oliveira (UTAD- Univerity, Vila Real, Portugal)
S. Oraintara (Univ.of Texas, Arlington, TX, USA)
A.A. Orouji (Semnan University, Semnan, Iran)
T. Pavlidis (Stony Brook Univ., Stony Brook, NY, USA)
Y. Paek (School of Electrical Engineering, Seoul, South Korea)
H.R. Pota (University of New South Wales, Sydney, Australia)
A. Poursaberi (Catholic University Leuven, Heverlee, Belgium)
A. Pourzaki (Khorasan Sci.Tech.Park, Mashhad, Iran)
R. Puri (IBM T J Watson Research Center, Yorktown Heights, NY, USA)
S. Ramaprabhu (Indian Institute of Technology, Madras, India)
A. Ramezani (Sharif University of Technology, Tehran, Iran)
V.R. Rao (Indian Institute of Technology, Mumbai, India)
A. Rastegar (SEMATECH, Albany, NY, USA)
A.K. Ray (Queen Mary Univ.of London, London, UK)
D.W. Repperger (Air Force Research Laboratory, Ohio, OH, USA)
E.A. Robinson (Columbia University, New York, MA, USA)
B. Roberto (University of Trento, Trento, Italy)
E. Saber (Rochester Inst. Tech., Rochester, NY, USA)
K. Saeed (Bialystok Technical University, Bialystok, Poland)
A. Salhi (Natl. Nanotech. Laboratory, Lecce, Italy)
A.A. Salman (Texas Instruments Inc. Dallas, Texas)
B.G. Sammakia (State University of New York at Binghamton, Binghamton, NY, USA)
S.C.M. Samson (DSO National Labs, Singapore, Singapore)
A.J. Sangster (Heriot-Watt University, Edinburgh, Scotland)
A.V. Savkin (The Univ.New South Wales, Sydney, Australia)
R.K. Savkina (National Academy of Sciences of Ukraine, Kiev, Ukraine)
G. Sberveglieri (Universita di Brescia, Brescia, Italy)
R. Schettini (Università degli Studi di Milano-Bicocca, Milan, Italy)
D. Schonfeld (University of Illinois, Chicago, IL, USA)
J.L. Schwartz (Florida State University, Tallahassee, FL, USA)
A.K. Seghouane (Australian Natl. Univ., Canberra, Australia)
D.K. Shaeffer (Aspendos Communications, Inc., Santa Clara, CA, USA)
F. Shi (University of California, Irvine, CA, USA)
M.A. Shibib (International Rectifier, El Segundo, CA, USA)
J. Silva-Martinez (Texas A&M University, Texas, TX, USA)
G.C. Sirakoulis (Democritus University of Thrace, Xanthi, Greece)
S.K. Sitaraman (Georgia Institute of Technology, Atlanta, GA, USA)
A. Solanas (Rovira i Virgili Univ., Tarragona, Spain)
P.P. Sotiriadis (The Johns Hopkins University, Baltimore, MD, USA)
A. Souifi (Lyon's Inst. Nanoteh., Lyon, France)
M.R. Stan (University of Virginia, Charlottesville, VA, USA)
C.Y. Su (Concordia University, Montreal, Canada)
Y. Sun (University of Hertfordshire, Hatfield, UK)
A. Swarnakar (University of Alberta, Edmonton, Canada)
A. Tayebi (Lakehead University, Thunder Bay, Canada)
D.V. Thiel (Centre for Wireless Monitoring and Applications, Nathan, Australia)
G. Tina (University of Catania, Catania, Italy)
A.H. Titus (State Univ. New York, Buffalo, NY, USA)
A.M. Trzynadlowski (University of Nevada, Reno, NV, USA)
T. Tsiftsis (Aristotle Univ. Thessaloniki, Thessaloniki, Greece)
S. Tumanski (Warsaw University of Technology, Warsaw, Poland)
A. Ukil (ABB Corporate Resarch, Daettwil, Switzerland)
A. Ulyashin (Institute for Energy Technology, Kjeller, Norway)
Y. Vardi (Rutgers University, Piscataway, NJ, USA)
A.C. Vidal (CEIT, Donostia, Spain)
S.H. Voldman (Semiconductor Res.Dev.Ctr., Essex Junction, VT, USA)
A. Walker (Vadum Inc., Raleigh, NC, USA)
A. Walker (North Carolina State University, Raleigh, NC, USA)
H.Y. Wang (Natl. Kaohsiung Univ. Applied Sciences, Kaohsiung, Taiwan)
L. Wang (Nanyang Tech. University, Singapore, Singapore)
Z.L. Wang (Georgia Institute of Technology, Atlanta, GA, USA)
M. Willander (Linkoping University, Linkoping, Sweden)
K. Wu (Ecole Polytechnique, Montreal, Canada)
M.Q. Xiao (Southern Illinois Univ., Carbondale, IL, USA)
M. Yamashita (Kyushu University, Higashiku, Japan)
Y.D. Yao (Stevens Institute of Technology, Hoboken, NJ, USA)
S. Yi (Portland State University, Portland, USA)
A. Yin (Brown University, Providence, RI, USA)
S.F. Yu (Nanyang Tech. University, Singapore, Singapore)
M. Yung (Columbia University, New York, NY, USA)
A.F. Zobaa (University of Exeter, Cornwall, UK)
A. Zolotas (Loughborough University, Loughborough, UK)
M. Zwolinski (University of Southampton, Southampton, UK)